RS1E170GNTB

RS1E170GNTB_製品イメージ01

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Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
FET TypeN-Channel
Drain to Source Voltage (Vdss)30V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C17A(TA), 40A(Tc)
Input Capacitance (Ciss) (Max) @ Vds720 pF @ 15 V
Power Dissipation (Max)3W(Ta), 23W(Tc)
Rds On (Max) @ Id, Vgs6.7mOhms @ 17A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Vgs (Max)±20V
Operating Temperature Range150°C(TJ)
Mounting TypeSurface Mount
Device Package8-HSOP
TechnologyMosfet (Metal Oxide)

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 2,600

MOQ:10

SPQ:10

Quantity

Unit Price Total
QuantityUnit Price
10 - 99 $0.656
100 - 499 $0.611
500 - 999 $0.573
1,000 - 2,499 $0.528
2,500 - 4,999 $0.437
5,000 - 12,499 $0.407
12,500 - $0.354
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Alternative Part Number(s)

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