RQ6E050ATTCR

RQ6E050ATTCR_製品イメージ01

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Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
FET TypeP-Channel
Drain to Source Voltage (Vdss)30V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C5A(TA)
Input Capacitance (Ciss) (Max) @ Vds940 pF @ 15 V
Power Dissipation (Max)1.25W(Ta)
Rds On (Max) @ Id, Vgs27mOhms @ 5A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs20.8 nC @ 10 V
Vgs (Max)±20V
Operating Temperature Range150°C(TJ)
Mounting TypeSurface Mount
Device PackageTSMT6(SC-95)
TechnologyMosfet (Metal Oxide)

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 3,000

MOQ:10

SPQ:10

Quantity

Unit Price Total
QuantityUnit Price
10 - 49 $0.269
50 - 99 $0.232
100 - 499 $0.207
500 - 999 $0.182
1,000 - 2,999 $0.169
3,000 - 5,999 $0.138
6,000 - 14,999 $0.132
15,000 - $0.113

Alternative Part Number(s)

IRLML0030TRPBF

Infineon

DMN3042L-7

Diodes Inc.

FDC655BN

onsemi