RQ6E030ATTCR

RQ6E030ATTCR_製品イメージ01

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Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
FET TypeP-Channel
Drain to Source Voltage (Vdss)MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)30V
Input Capacitance (Ciss) (Max) @ Vds3A (Ta)
Power Dissipation (Max)240 pF @ 15 V
Vgs(th) (Max) @ Id91mOhms @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs2.5V @ 1mA
Vgs (Max)5.4 nC @ 10 V
Device PackageSurface Mount
TechnologySOT-23-6 Thin, TSOT-23-6

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 3,000

MOQ:10

SPQ:10

Quantity

Unit Price Total
QuantityUnit Price
10 - 99 $0.167
100 - 499 $0.152
500 - 999 $0.144
1,000 - 2,999 $0.137
3,000 - 5,999 $0.114
6,000 - 14,999 $0.106
15,000 - $0.091
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