RQ5H020SPTL

RQ5H020SPTL_製品イメージ01

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Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
FET TypeP-Channel
Drain to Source Voltage (Vdss)45V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C2A(TA)
Input Capacitance (Ciss) (Max) @ Vds500 pF @ 10 V
Power Dissipation (Max)540mW(Ta)
Rds On (Max) @ Id, Vgs190mOhms @ 2A, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs9.5 nC @ 10 V
Vgs (Max)±20V
Operating Temperature Range150°C(TJ)
Mounting TypeSurface Mount
Device PackageTSMT3
TechnologyMosfet (Metal Oxide)

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 140

MOQ:10

SPQ:10

Quantity

Unit Price Total
QuantityUnit Price
10 - 99 $0.202
100 - 499 $0.187
500 - 999 $0.172
1,000 - 2,999 $0.165
3,000 - 5,999 $0.135
6,000 - 14,999 $0.127
15,000 - $0.105
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Alternative Part Number(s)

FDG332PZ

onsemi

BUK7880-55A,115

Nexperia

FDG316P

onsemi