RQ5C025TPTL

RQ5C025TPTL_製品イメージ01

Images are for reference only.
Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
FET TypeP-Channel
Drain to Source Voltage (Vdss)20V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C2.5A(TA)
Input Capacitance (Ciss) (Max) @ Vds630 pF @ 10 V
Power Dissipation (Max)700mW(Ta)
Rds On (Max) @ Id, Vgs95mOhms @ 2.5A, 4.5V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs7 nC @ 4.5 V
Vgs (Max)±12V
Operating Temperature Range150°C(TJ)
Mounting TypeSurface Mount
Device PackageTSMT3
TechnologyMosfet (Metal Oxide)

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 3,000

MOQ:10

SPQ:10

Quantity

Unit Price Total
QuantityUnit Price
10 - 99 $0.205
100 - 499 $0.19
500 - 999 $0.176
1,000 - 2,999 $0.161
3,000 - 5,999 $0.132
6,000 - 14,999 $0.124
15,000 - $0.11
--