RPI-243

RPI-243_製品イメージ01

Images are for reference only.
Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

Collector Emitter Breakdown Voltage30 V
Collector Emitter Voltage (VCEO)30 V
Contact PlatingCopper, Silver, Tin
Fall Time10 µs
Forward Current50 mA
Forward Voltage1.3 V
Height5.2 mm
Lead FreeLead Free
Lifecycle StatusProduction (Last Updated: 4 years ago)
Max Collector Current30 mA
Max Operating Temperature85 °C
Max Output Current30 mA
Max Supply Current50 mA
Min Operating Temperature-25 °C
MountThrough Hole
Number of Channels1
Output ConfigurationPhototransistor
Output TypePhototransistor
PackagingBulk
Power Dissipation80 mW
Radiation HardeningNo
REACH SVHCNo
Response Time10 µs
Reverse Voltage (DC)5 V
Rise Time10 µs
Sensing Distance2.0066 mm
Voltage Rating (DC)1.3 V
Wavelength950 nm
Width4.2 mm

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 935

MOQ:1

SPQ:1

Quantity

Unit Price Total
QuantityUnit Price
1 - 49 $1.026
50 - 99 $0.92
100 - 499 $0.822
500 - 999 $0.716
1,000 - 1,999 $0.513
2,000 - 4,999 $0.475
5,000 - $0.407
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