RH6P040BHTB1

RH6P040BHTB1_製品イメージ01

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Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
FET TypeN-Channel
Drain to Source Voltage (Vdss)100V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C40A(Tc)
Input Capacitance (Ciss) (Max) @ Vds1080 pF @ 50 V
Power Dissipation (Max)59W(Tc)
Rds On (Max) @ Id, Vgs15.6mOhms @ 40A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs16.7 nC @ 10 V
Vgs (Max)±20V
Operating Temperature Range150°C(TJ)
Mounting TypeSurface Mount
Device Package8-HSMT(3.2x3)
TechnologyMosfet (Metal Oxide)

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 3,000

MOQ:10

SPQ:10

Quantity

Unit Price Total
QuantityUnit Price
10 - 99 $0.952
100 - 499 $0.885
500 - 999 $0.825
1,000 - 2,999 $0.757
3,000 - 5,999 $0.637
6,000 - 14,999 $0.585
15,000 - $0.51
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