RF4G100BGTCR

RF4G100BGTCR_製品イメージ01

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Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
FET TypeN-Channel
Drain to Source Voltage (Vdss)40V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C10A(TA)
Input Capacitance (Ciss) (Max) @ Vds530 pF @ 20 V
Power Dissipation (Max)2W(Ta)
Rds On (Max) @ Id, Vgs14.2mOhms @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs10.6 nC @ 10 V
Vgs (Max)±20V
Operating Temperature Range150°C(TJ)
Mounting TypeSurface Mount
Device PackageDFN2020-8S
TechnologyMosfet (Metal Oxide)

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 3,000

MOQ:10

SPQ:10

Quantity

Unit Price Total
QuantityUnit Price
10 - 99 $0.324
100 - 499 $0.302
500 - 999 $0.279
1,000 - 2,999 $0.264
3,000 - 5,999 $0.219
6,000 - 14,999 $0.204
15,000 - $0.173
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