RCJ160N20TL

RCJ160N20TL_製品イメージ01

Images are for reference only.
Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
FET TypeN-Channel
Drain to Source Voltage (Vdss)200V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C16A(Tc)
Input Capacitance (Ciss) (Max) @ Vds1370 pF @ 25 V
Power Dissipation (Max)1.56W(Ta), 40W(Tc)
Rds On (Max) @ Id, Vgs180mOhms @ 8A, 10V
Vgs(th) (Max) @ Id5.25V @ 1mA
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Vgs (Max)±30V
Operating Temperature Range150°C(TJ)
Mounting TypeSurface Mount
Device PackageLPTS
TechnologyMosfet (Metal Oxide)
FET FeatureStandard

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 1,000

MOQ:10

SPQ:10

Quantity

Unit Price Total
QuantityUnit Price
10 - 49 $1.65
50 - 99 $1.456
100 - 499 $1.306
500 - 999 $1.181
1,000 - 1,999 $0.987
2,000 - 4,999 $0.912
5,000 - 9,999 $0.787
10,000 - $0.737

Alternative Part Number(s)

FDG312P

onsemi

FDG1024NZ

onsemi

FDG328P

onsemi