R6086YNZ4C13

R6086YNZ4C13_製品イメージ01

Images are for reference only.
Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
FET TypeN-Channel
Drain to Source Voltage (Vdss)MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)600V
Current - Continuous Drain (Id) @ 25°CSurface Mount
Input Capacitance (Ciss) (Max) @ Vds86A (Tc)
Power Dissipation (Max)5100 pF @ 100 V
Rds On (Max) @ Id, Vgs150°C (TJ)
Vgs(th) (Max) @ Id44mOhms @ 17A, 12V
Gate Charge (Qg) (Max) @ Vgs6V @ 4.6mA
Vgs (Max)110 nC @ 10 V
Operating Temperature Range±30V
Applications150°C (TJ)
Device PackageThrough Hole
Technology48 nC @ 18 V

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 500

MOQ:1

SPQ:1

Quantity

Unit Price Total
QuantityUnit Price
1 - 49 $7.89
50 - 99 $7.367
100 - 499 $6.843
500 - 599 $6.312
600 - 1,199 $5.265
1,200 - 2,999 $4.871
3,000 - $4.211
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