R6007ENXC7G

Images are for reference only.
Please see Product Specifications
for details.


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
FET TypeN-Channel
Drain to Source Voltage (Vdss)600V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C7A(TA)
Input Capacitance (Ciss) (Max) @ Vds390 pF @ 25 V
Power Dissipation (Max)46W(Tc)
Rds On (Max) @ Id, Vgs620mOhms @ 2.4A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Vgs (Max)±20V
Operating Temperature Range150°C(TJ)
Mounting TypeThrough Hole
Device PackageTO-220FM
TechnologyMosfet (Metal Oxide)

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 1,050

MOQ:50

SPQ:50

Quantity

Unit Price Total
QuantityUnit Price
50 - 99 $1.732
100 - 499 $1.561
500 - 999 $1.413
1,000 - 1,999 $1.177
2,000 - 4,999 $1.088
5,000 - 9,999 $0.94
10,000 - $0.881
--