DTA123JE3TL

DTA123JE3TL_製品イメージ01

Images are for reference only.
Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
SeriesDTC123J
Transistor TypeNPN - Pre-Bias + Diode
Voltage - Collector Emitter Breakdown (Max)50 V
Current - Collector Cutoff (Max)500 nA(ICBO)
Current - Collector (Ic) (Max)100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA/5V
Resistor - Emitter Base (R2)47 kOhms
Resistor - Base (R1)2.2 kOhms
Power - Max150 mW
Vce Saturation (Max) @ Ib, Ic300mV @ 250μA/5mA
Product OverviewTRANS PREBIAS NPN 50V 0.1A EMT3
Mounting TypeSurface Mount
Device PackageEMT3

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 1,100

MOQ:10

SPQ:10

Quantity

Unit Price Total
QuantityUnit Price
10 - 499 $0.076
500 - 999 $0.068
1,000 - 2,999 $0.061
3,000 - 5,999 $0.053
6,000 - 14,999 $0.045
15,000 - $0.038
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