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- TLP841(TOSHIBA)
TLP841
TOSHIBA
Images are for reference only.
Please see Product Specifications
for details.
Documents
Product Specifications
| Collector Emitter Breakdown Voltage | 35 V |
| Collector Emitter Voltage (VCEO) | 35 V |
| Dark Current | 50 nA |
| Fall Time | 50 µs |
| Forward Current | 20 mA |
| Introduction Date | 2003-09-02 |
| Lifecycle Status | Obsolete (Last Updated: 3 months ago) |
| Max Collector Current | 50 mA |
| Max Operating Temperature | 75 °C |
| Min Operating Temperature | -10 °C |
| Mount | Through Hole |
| Number of Circuits | 1 |
| Number of Pins | 4 |
| Output Configuration | Phototransistor |
| Power Dissipation | 75 mW |
| Response Time | 15 µs |
| Rise Time | 50 µs |
| Sensing Distance | 5.0038 mm |
| Wavelength | 940 nm |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
