MUN2211T1G
ON SEMICONDUCTOR
Documents
Product Specifications
| Category | Discrete semiconductors Discrete single Pre-Biased |
| Manufacturer | ON SEMICONDUCTOR |
| Transistor Type | NPN - Pre-Bias |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Current - Collector Cutoff (Max) | 500 nA |
| Current - Collector (Ic) (Max) | 100 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA/10V |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Resistor - Base (R1) | 10 kOhms |
| Power - Max | 230 mW |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA/10mA |
| Product Overview | TRANS PREBIAS NPN 50V 0.1A SC59 |
| Mounting Type | Surface Mount |
| Device Package | SC-59 |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 117,000
MOQ:3,000
SPQ:3,000
| Quantity | Unit Price | |
|---|---|---|
| 3,000 - 11,999 | $0.076 | |
| 12,000 - 17,999 | $0.041 | |
| 18,000 - | $0.034 | |
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