FQB47P06TM-AM002
ON SEMICONDUCTOR
Images are for reference only.
Please see Product Specifications
for details.
Product Specifications
| Category | Discrete semiconductors Discrete single |
| Manufacturer | ON SEMICONDUCTOR |
| Series | QFETR |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 47A(Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
| Power Dissipation (Max) | 3.75W(Ta), 160W(Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhms @ 23.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Vgs (Max) | ±25V |
| Operating Temperature Range | -55°C ~ 175°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | TO-263(D2PAK) |
| Technology | Mosfet (Metal Oxide) |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 800
MOQ:800
SPQ:800
| Quantity | Unit Price | |
|---|---|---|
| 800 - | $2.996 | |
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