RQ6E050ATTCR
ROHM
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Please see Product Specifications
for details.
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Product Specifications
| Category | Discrete semiconductors Discrete single |
| Manufacturer | ROHM |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 5A(TA) |
| Input Capacitance (Ciss) (Max) @ Vds | 940 pF @ 15 V |
| Power Dissipation (Max) | 1.25W(Ta) |
| Rds On (Max) @ Id, Vgs | 27mOhms @ 5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 20.8 nC @ 10 V |
| Vgs (Max) | ±20V |
| Operating Temperature Range | 150°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | TSMT6(SC-95) |
| Technology | Mosfet (Metal Oxide) |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 0
MOQ:3,000
SPQ:3,000
