SUM110P06-07L-E3
VISHAY
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Please see Product Specifications
for details.
Documents
Product Specifications
| Category | Discrete semiconductors Discrete single |
| Manufacturer | VISHAY |
| Series | TrenchFETR |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 110A(Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 11400 pF @ 25 V |
| Power Dissipation (Max) | 3.75W(Ta), 375W(Tc) |
| Rds On (Max) @ Id, Vgs | 6.9mOhms @ 30A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 345 nC @ 10 V |
| Vgs (Max) | ±20V |
| Operating Temperature Range | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Device Package | TO-263(D2PAK) |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
