SCT2H12NZGC11
ROHM
RoHS Status:RoHS
Stock Type:Quality-guaranteed
CoreStaff Part Number:st68258855
Date Code:21
Images are for reference only.
Please see Product Specifications
for details.
Documents
Product Specifications
| Category | Discrete semiconductors Discrete single |
| Manufacturer | ROHM |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1700V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A(Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 184 pF @ 800 V |
| Power Dissipation (Max) | 35W(Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohms @ 1.1A, 18V |
| Vgs(th) (Max) @ Id | 4V @ 900μA |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 18 V |
| Vgs (Max) | +22V, -6V |
| Operating Temperature Range | 175°C(TJ) |
| Mounting Type | Through Hole |
| Device Package | TO-3PFM |
| Technology | Sicfet (Silicon Carbide) |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
