BC847BPDW1T2G
ON SEMICONDUCTOR
Images are for reference only.
Please see Product Specifications
for details.
Documents
Product Specifications
| Case/Package | SOT-363-6 |
| China RoHS | Compliant |
| Collector Base Voltage (VCBO) | 50 V |
| Collector Emitter Breakdown Voltage | 45 V |
| Collector Emitter Saturation Voltage | 650 mV |
| Collector Emitter Voltage (VCEO) | 45 V |
| Contact Plating | Tin |
| Element Configuration | Dual |
| Emitter Base Voltage (VEBO) | -5 V |
| Frequency | 100 MHz |
| Gain Bandwidth Product | 100 MHz |
| Halogen Free | Halogen Free |
| hFE Min | 200 |
| Introduction Date | 2000-03-01 |
| Lead Free | Lead Free |
| Lifecycle Status | Production (Last Updated: 5 years ago) |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 years ago) |
| Max Breakdown Voltage | 45 V |
| Max Collector Current | 100 mA |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 380 mW |
| Min Operating Temperature | -55 °C |
| Number of Elements | 2 |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 380 mW |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Transition Frequency | 100 MHz |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 519
MOQ:519
SPQ:1
| Quantity | Unit Price | |
|---|---|---|
| 519 - | $0.142 | |
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