TK6Q65W,S1Q
TOSHIBA
Images are for reference only.
Please see Product Specifications
for details.
Product Specifications
| Category | Discrete semiconductors Discrete single |
| Manufacturer | TOSHIBA |
| Series | DTMOSIV |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5.8A (Ta) |
| Power Dissipation (Max) | 390 pF @ 300 V |
| Rds On (Max) @ Id, Vgs | 150°C (TJ) |
| Vgs(th) (Max) @ Id | 1.05Ohms @ 2.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3.5V @ 180µA |
| Operating Temperature Range | ±30V |
| Applications | 150°C (TJ) |
| Device Package | Through Hole |
| Technology | IPAK |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 10
MOQ:10
SPQ:1
| Quantity | Unit Price | |
|---|---|---|
| 10 - | $7.354 | |
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