MUN5312DW1T1G
ON SEMICONDUCTOR
Images are for reference only.
Please see Product Specifications
for details.
Documents
Product Specifications
| Case/Package | SOT-363-6 |
| Collector Emitter Breakdown Voltage | 50 V |
| Collector Emitter Saturation Voltage | 250 mV |
| Collector Emitter Voltage (VCEO) | 50 V |
| Contact Plating | Tin |
| Continuous Collector Current | 100 mA |
| Current Rating | 100 mA |
| Element Configuration | Dual |
| Height | 900 µm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Lifecycle Status | Production (Last Updated: 4 years ago) |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 4 years ago) |
| Max Breakdown Voltage | 50 V |
| Max Collector Current | 100 mA |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 187 mW |
| Min Operating Temperature | -55 °C |
| Number of Channels | 2 |
| Number of Pins | 6 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| REACH SVHC | No |
| Schedule B | 8541210080, 8541210080|8541210080, 8541210080|8541210080|8541210080, 8541210080|8541210080|8541210080|8541210080 |
| Voltage Rating (DC) | 50 V |
| Width | 1.25 mm |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 35,925
MOQ:1,247
SPQ:1
| Quantity | Unit Price | |
|---|---|---|
| 1,247 - 4,983 | $0.059 | |
| 4,984 - 27,596 | $0.041 | |
| 27,597 - | $0.037 | |
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