ILD217T
VISHAY
Images are for reference only.
Please see Product Specifications
for details.
Documents
Product Specifications
| Ambient Temperature Range High | 100 °C |
| Approvals | UL |
| Case/Package | SOIC |
| Collector Emitter Breakdown Voltage | 70 V |
| Collector Emitter Saturation Voltage | 400 mV |
| Collector Emitter Voltage (VCEO) | 70 V |
| Contact Plating | Tin |
| Current Transfer Ratio | 120 % |
| Forward Current | 10 mA |
| Forward Voltage | 1.2 V |
| Height | 3.5 mm |
| Input Current | 10 mA |
| Isolation Voltage | 4 kV |
| Lead Free | Lead Free |
| Max Input Current | 30 mA |
| Max Operating Temperature | 100 °C |
| Max Output Voltage | 70 V |
| Max Power Dissipation | 300 mW |
| Min Operating Temperature | -55 °C |
| Mount | PCB , Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Number of Pins | 8 |
| Output Type | Phototransistor |
| Output Voltage | 70 V |
| Packaging | Tape & Reel |
| Power Dissipation | 300 mW |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| Reverse Breakdown Voltage | 6 V |
| Reverse Voltage | 6 V |
| Reverse Voltage (DC) | 6 V |
| Schedule B | 8541408000, 8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|8541408000|85 |
| Voltage Rating (DC) | 1.2 V |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
