IRF7341TRPBF

INFINEON

Stock Type:Quality-guaranteed

Supplier Rank:B-1

CoreStaff Part Number:st63742014

Date Code:2223+

IRF7341TRPBF_製品イメージ01

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Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerINFINEON
SeriesHEXFET®
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C4.7A
Input Capacitance (Ciss) (Max) @ Vds740pF @ 25V
Power - Max2W
Rds On (Max) @ Id, Vgs50mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id1V @ 250μA
Gate charge (Qg) when Vgs is applied (max)36nC @ 10V
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Operating Temperature Range-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Device Package8-SO

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 20,000

MOQ:1

SPQ:1

Quantity

Unit Price Total
QuantityUnit Price
1 - 9 $1.343
10 - 49 $0.993
50 - 99 $0.588
100 - 499 $0.537
500 - 999 $0.503
1,000 - 1,999 $0.497
2,000 - 3,999 $0.491
4,000 - $0.49

Alternative Part Number(s)

IRF7343PBF

Infineon

IRF7343TRPBF

Infineon

ZXMN6A25N8TA

Diodes Inc.

IRF7341PBF

Infineon