GP1S094HCZ0F
SHARP
Images are for reference only.
Please see Product Specifications
for details.
Documents
Product Specifications
| Collector Emitter Breakdown Voltage | 35 V |
| Collector Emitter Voltage (VCEO) | 35 V |
| Contact Plating | Copper, Tin |
| Fall Time | 150 µs |
| Forward Current | 50 mA |
| Forward Voltage | 1.2 V |
| Height | 4.8 mm |
| Input Current | 20 mA |
| Lead Free | Lead Free |
| Max Collector Current | 20 mA |
| Max Operating Temperature | 85 °C |
| Max Power Dissipation | 100 mW |
| Min Operating Temperature | -25 °C |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 4 |
| Output Configuration | Phototransistor |
| Output Current | 20 mA |
| Output Type | Phototransistor |
| Output Voltage | 35 V |
| Power Dissipation | 100 mW |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| Response Time | 50 µs |
| Reverse Breakdown Voltage | 6 V |
| Reverse Voltage (DC) | 6 V |
| Rise Time | 150 µs |
| Sensing Distance | 2.9972 mm |
| Wavelength | 950 nm |
| Width | 2.6 mm |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
