RN1426(TE85L,F)
TOSHIBA
Images are for reference only.
Please see Product Specifications
for details.
Documents
Product Specifications
| Category | Discrete semiconductors Discrete single Pre-Biased |
| Manufacturer | TOSHIBA |
| Transistor Type | NPN - Pre-Bias |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Current - Collector Cutoff (Max) | 500 nA |
| Current - Collector (Ic) (Max) | 800 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 100mA/1V |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Resistor - Base (R1) | 1 kOhms |
| Power - Max | 200 mW |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA/50mA |
| Product Overview | TRANS PREBIAS NPN 50V 0.8A SMINI |
| Mounting Type | Surface Mount |
| Device Package | S Mini |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 9,000
MOQ:3,000
SPQ:3,000
| Quantity | Unit Price | |
|---|---|---|
| 3,000 - 29,999 | $0.115 | |
| 30,000 - 149,999 | $0.114 | |
| 150,000 - 299,999 | $0.114 | |
| 300,000 - 1,499,999 | $0.113 | |
| 1,500,000 - | $0.113 | |
| - | - | |
| - | - | |
| - | - | |
