RJK4518DPK-00#T0
RENESAS
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Please see Product Specifications
for details.
Product Specifications
| Category | Discrete semiconductors Discrete single |
| Manufacturer | RENESAS |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 450V |
| Current - Continuous Drain (Id) @ 25°C | 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 39A(TA) |
| Power Dissipation (Max) | 4100 pF @ 25 V |
| Rds On (Max) @ Id, Vgs | 200W(Tc) |
| Vgs(th) (Max) @ Id | 130mOhms @ 19.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 30V |
| Vgs (Max) | ±30V |
| Operating Temperature Range | ±30V |
| Applications | 150°C (TJ) |
| Device Package | Through Hole |
| Technology | TO-3P |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
