SCT2H12NZGC11
ROHM
มาตรฐานRoHS:N/A
ประเภทสต็อก:Quality-guaranteed
Management ID:st76300198
Date Code:N/A
เอกสาร
คำอธิบายสินค้า
| Category | ดิสครีตเซมิคอนดักเตอร์ Discrete single |
| Manufacturer | ROHM |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1700V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A(Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 184 pF @ 800 V |
| Power Dissipation (Max) | 35W(Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohms @ 1.1A, 18V |
| Vgs(th) (Max) @ Id | 4V @ 900μA |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 18 V |
| Vgs (Max) | +22V, -6V |
| Operating Temperature Range | 175°C(TJ) |
| Mounting Type | Through Hole |
| Device Package | TO-3PFM |
| Technology | Sicfet (Silicon Carbide) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
มีอยู่ในสต้อค: 17
MOQ:17
SPQ:1
| จำนวน | ราคาต่อหน่วย (FOB JAPAN) |
|---|---|
| 17 - 169 | $4.594 |
| 170 - 849 | $4.451 |
| 850 - 1,699 | $4.376 |
| 1,700 - 8,499 | $4.32 |
| 8,500 - 16,999 | $4.297 |
| 17,000 - 33,999 | $4.292 |
| 34,000 - 67,999 | $4.282 |
| 68,000 - | $4.275 |




