BC847BDW1T1G
ON SEMICONDUCTOR
รูปภาพใช้สำหรับการอ้างอิงเท่านั้น หากต้องการข้อมูลเพิ่มเติมโปรดดูที่คำอธิบายสินค้าด้านล่าง
เอกสาร
คำอธิบายสินค้า
| Case/Package | SOT-363-6 |
| China RoHS | Compliant |
| Collector Base Voltage (VCBO) | 50 V |
| Collector Emitter Breakdown Voltage | 45 V |
| Collector Emitter Saturation Voltage | 600 mV |
| Collector Emitter Voltage (VCEO) | 45 V |
| Contact Plating | Tin |
| Current Rating | 100 mA |
| Element Configuration | Dual |
| Emitter Base Voltage (VEBO) | 6 V |
| Frequency | 100 MHz |
| Gain Bandwidth Product | 100 MHz |
| Halogen Free | Halogen Free |
| Height | 900 µm |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Lifecycle Status | Production (Last Updated: 5 years ago) |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 years ago) |
| Max Breakdown Voltage | 45 V |
| Max Collector Current | 100 mA |
| Max Frequency | 100 MHz |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 380 mW |
| Min Operating Temperature | -55 °C |
| Number of Elements | 2 |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 380 mW |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| Schedule B | 8541210080, 8541210080|8541210080, 8541210080|8541210080|8541210080, 8541210080|8541210080|8541210080|8541210080 |
| Transition Frequency | 100 MHz |
| Voltage Rating (DC) | 45 V |
| Width | 1.25 mm |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
