QS8M51TR
ROHM
เอกสาร
คำอธิบายสินค้า
| Category | ดิสครีตเซมิคอนดักเตอร์ Arrays |
| Manufacturer | ROHM |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 2A, 1.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 25V, 950pF @ 25V |
| Power - Max | 1.5W |
| Rds On (Max) @ Id, Vgs | 325mOhms @ 2A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate charge (Qg) when Vgs is applied (max) | 4.7nC @ 5V |
| Technology | MOSFET (Metal Oxide) |
| Configuration | NおよびPチャンネル |
| FET Feature | Logic Level Gate |
| Operating Temperature Range | 150°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | TSMT8 |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
มีอยู่ในสต้อค: 3,000
MOQ:10
SPQ:10
| จำนวน | ราคาต่อหน่วย (FOB JAPAN) |
|---|---|
| 10 - 49 | $1.023 |
| 50 - 99 | $0.891 |
| 100 - 499 | $0.784 |
| 500 - 999 | $0.703 |
| 1,000 - 2,999 | $0.64 |
| 3,000 - 5,999 | $0.533 |
| 6,000 - 14,999 | $0.496 |
| 15,000 - | $0.427 |




