QS6J11TR
ROHM
เอกสาร
คำอธิบายสินค้า
| Category | ดิสครีตเซมิคอนดักเตอร์ Arrays |
| Manufacturer | ROHM |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 2A |
| Input Capacitance (Ciss) (Max) @ Vds | 770pF @ 6V |
| Power - Max | 600mW |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 2A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate charge (Qg) when Vgs is applied (max) | 6.5nC @ 4.5V |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Operating Temperature Range | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Device Package | TSMT6 (SC-95) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
มีอยู่ในสต้อค: 3,000
MOQ:10
SPQ:10
| จำนวน | ราคาต่อหน่วย (FOB JAPAN) |
|---|---|
| 10 - 99 | $0.75 |
| 100 - 499 | $0.704 |
| 500 - 999 | $0.651 |
| 1,000 - 2,999 | $0.598 |
| 3,000 - 5,999 | $0.5 |
| 6,000 - 14,999 | $0.462 |
| 15,000 - | $0.401 |
| - | - |




