CNY17-4
VISHAY
รูปภาพใช้สำหรับการอ้างอิงเท่านั้น หากต้องการข้อมูลเพิ่มเติมโปรดดูที่คำอธิบายสินค้าด้านล่าง
เอกสาร
คำอธิบายสินค้า
| Ambient Temperature Range High | 110 °C |
| Approvals | VDE |
| Case/Package | DIP |
| Collector Emitter Breakdown Voltage | 70 V |
| Collector Emitter Saturation Voltage | 400 mV |
| Collector Emitter Voltage (VCEO) | 70 V |
| Current Transfer Ratio | 320 % |
| Fall Time | 15 µs |
| Forward Current | 60 mA |
| Forward Voltage | 1.39 V |
| Height | 5.8 mm |
| Input Current | 60 mA |
| Isolation Voltage | 5 kV |
| Lead Free | Lead Free |
| Max Collector Current | 100 mA |
| Max Input Current | 60 mA |
| Max Operating Temperature | 110 °C |
| Max Output Voltage | 80 kV |
| Max Power Dissipation | 150 mW |
| Min Operating Temperature | -55 °C |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 6 |
| Output Current per Channel | 100 mA |
| Output Type | Phototransistor |
| Output Voltage | 70 V |
| Power Dissipation | 250 mW |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| Reverse Breakdown Voltage | 5 V |
| Reverse Voltage | 6 V |
| Rise Time | 4.6 µs |
| Schedule B | 8541408000, 8541408000|8541408000|8541408000|8541408000|8541408000 |
| Turn-Off Delay Time | 25 µs |
| Turn-On Delay Time | 6 µs |
| Voltage Rating (DC) | 32 V |
| Width | 6.5 mm |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
