BAS40-06LT1G
ON SEMICONDUCTOR
รูปภาพใช้สำหรับการอ้างอิงเท่านั้น หากต้องการข้อมูลเพิ่มเติมโปรดดูที่คำอธิบายสินค้าด้านล่าง
เอกสาร
คำอธิบายสินค้า
| Average Rectified Current | 120 mA |
| Capacitance | 5 pF |
| Case/Package | SOT-23-3 |
| Contact Plating | Tin |
| Element Configuration | Common Anode |
| Forward Current | 120 mA |
| Forward Voltage | 1 V |
| Halogen Free | Halogen Free |
| Height | 1.01 mm |
| Lead Free | Lead Free |
| Lifecycle Status | Production (Last Updated: 4 years ago) |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 4 years ago) |
| Max Forward Surge Current (Ifsm) | 600 mA |
| Max Operating Temperature | 150 °C |
| Max Repetitive Reverse Voltage (Vrrm) | 40 V |
| Max Reverse Leakage Current | 1 µA |
| Max Reverse Voltage (DC) | 40 V |
| Max Surge Current | 600 mA |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Packaging | Tape and Reel |
| Peak Non-Repetitive Surge Current | 600 mA |
| Peak Reverse Current | 1 µA |
| Power Dissipation | 225 mW |
| Radiation Hardening | No |
| REACH SVHC | No |
| Schedule B | 8541100070, 8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|8541100070|85 |
| Width | 1.4 mm |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
มีอยู่ในสต้อค: 216,000
MOQ:6,000
SPQ:3,000
| จำนวน | ราคาต่อหน่วย (FOB JAPAN) |
|---|---|
| 6,000 - 17,999 | $0.051 |
| 18,000 - 26,999 | $0.028 |
| 27,000 - | $0.023 |
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| - | - |
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