EE-SG3
OMRON
รูปภาพใช้สำหรับการอ้างอิงเท่านั้น หากต้องการข้อมูลเพิ่มเติมโปรดดูที่คำอธิบายสินค้าด้านล่าง
เอกสาร
คำอธิบายสินค้า
| Collector Emitter Breakdown Voltage | 30 V |
| Collector Emitter Voltage (VCEO) | 30 V |
| Fall Time | 4 µs |
| Forward Current | 50 mA |
| Forward Voltage | 1.2 V |
| Input Current | 30 mA |
| Lead Free | Lead Free |
| Lifecycle Status | Production (Last Updated: 5 years ago) |
| Max Collector Current | 20 mA |
| Max Input Current | 30 mA |
| Max Operating Temperature | 85 °C |
| Max Power Dissipation | 100 mW |
| Min Operating Temperature | -25 °C |
| Mount | Panel, Solder , Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 4 |
| Output Configuration | Phototransistor |
| Output Type | Phototransistor |
| Output Voltage | 30 V |
| Packaging | Bulk |
| Power Dissipation | 100 mW |
| REACH SVHC | Unknown |
| Response Time | 4 µs |
| Reverse Breakdown Voltage | 4 V |
| Reverse Voltage (DC) | 4 V |
| Schedule B | 8541408000 |
| Sensing Distance | 3.6 mm |
| Termination | Solder |
| Wavelength | 940 nm |
| Width | 2 mm |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
