MMUN2115LT1G
ON SEMICONDUCTOR
เอกสาร
คำอธิบายสินค้า
| Category | ดิสครีตเซมิคอนดักเตอร์ Discrete single Pre-Biased |
| Manufacturer | ON SEMICONDUCTOR |
| Transistor Type | PNP - Pre-Bias |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Current - Collector Cutoff (Max) | 500 nA |
| Current - Collector (Ic) (Max) | 100 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA/10V |
| Resistor - Emitter Base (R2) | Infinity |
| Resistor - Base (R1) | 10 kOhms |
| Power - Max | 400 mW |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA/10mA |
| Product Overview | TRANS PREBIAS PNP 50V SOT23-3 |
| Mounting Type | Surface Mount |
| Device Package | SOT-23-3(TO-236) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
มีอยู่ในสต้อค: 54,000
MOQ:6,000
SPQ:3,000
| จำนวน | ราคาต่อหน่วย (FOB JAPAN) |
|---|---|
| 6,000 - 26,999 | $0.031 |
| 27,000 - 101,999 | $0.026 |
| 102,000 - 254,999 | $0.025 |
| 255,000 - 581,999 | $0.023 |
| 582,000 - | $0.0 |
| - | - |
| - | - |
| - | - |




