MUN5316DW1T1G
ON SEMICONDUCTOR
รูปภาพใช้สำหรับการอ้างอิงเท่านั้น หากต้องการข้อมูลเพิ่มเติมโปรดดูที่คำอธิบายสินค้าด้านล่าง
เอกสาร
คำอธิบายสินค้า
| Case/Package | SOT-363-6 |
| China RoHS | Compliant |
| Collector Emitter Breakdown Voltage | 50 V |
| Collector Emitter Saturation Voltage | 250 mV |
| Collector Emitter Voltage (VCEO) | 50 V |
| Contact Plating | Tin |
| Continuous Collector Current | 100 mA |
| Current Rating | 100 mA |
| Element Configuration | Dual |
| hFE Min | 160 |
| Lead Free | Lead Free |
| Lifecycle Status | Production (Last Updated: 5 years ago) |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 years ago) |
| Max Breakdown Voltage | 50 V |
| Max Collector Current | 100 mA |
| Max Operating Temperature | 150 °C |
| Max Output Current | 100 mA |
| Max Power Dissipation | 385 mW |
| Min Operating Temperature | -55 °C |
| Number of Elements | 2 |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Operating Supply Voltage | 50 V |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 187 mW |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Voltage Rating (DC) | 50 V |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
