MUN5211DW1T1G
ON SEMICONDUCTOR
รูปภาพใช้สำหรับการอ้างอิงเท่านั้น หากต้องการข้อมูลเพิ่มเติมโปรดดูที่คำอธิบายสินค้าด้านล่าง
เอกสาร
คำอธิบายสินค้า
| Case/Package | SOT-363 |
| Collector Base Voltage (VCBO) | 50 V |
| Collector Emitter Breakdown Voltage | 50 V |
| Collector Emitter Saturation Voltage | 250 mV |
| Collector Emitter Voltage (VCEO) | 50 V |
| Contact Plating | Tin |
| Continuous Collector Current | 100 mA |
| Current Rating | 100 mA |
| Element Configuration | Dual |
| Halogen Free | Halogen Free |
| Height | 1.1 mm |
| hFE Min | 35 |
| Lead Free | Lead Free |
| Lifecycle Status | Production (Last Updated: 4 years ago) |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 4 years ago) |
| Max Breakdown Voltage | 50 V |
| Max Collector Current | 100 mA |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Output Current | 100 mA |
| Max Power Dissipation | 250 mW |
| Min Operating Temperature | -55 °C |
| Number of Elements | 2 |
| Number of Pins | 6 |
| Operating Supply Voltage | 50 V |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 250 mW |
| Radiation Hardening | No |
| REACH SVHC | No |
| Schedule B | 8541210080, 8541210080|8541210080, 8541210080|8541210080|8541210080, 8541210080|8541210080|8541210080|8541210080 |
| Voltage Rating (DC) | 50 V |
| Width | 1.25 mm |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
มีอยู่ในสต้อค: 1,728,000
MOQ:6,000
SPQ:3,000
| จำนวน | ราคาต่อหน่วย (FOB JAPAN) |
|---|---|
| 6,000 - 59,999 | $0.068 |
| 60,000 - 299,999 | $0.068 |
| 300,000 - 599,999 | $0.067 |
| 600,000 - | $0.067 |
| - | - |
| - | - |
| - | - |
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