TCST1103
VISHAY
รูปภาพใช้สำหรับการอ้างอิงเท่านั้น หากต้องการข้อมูลเพิ่มเติมโปรดดูที่คำอธิบายสินค้าด้านล่าง
เอกสาร
คำอธิบายสินค้า
| Ambient Temperature Range High | 85 °C |
| Collector Emitter Breakdown Voltage | 70 V |
| Collector Emitter Saturation Voltage | 400 mV |
| Collector Emitter Voltage (VCEO) | 70 V |
| Contact Plating | Silver, Tin |
| Current Transfer Ratio | 20 % |
| Fall Time | 8 s |
| Forward Current | 60 mA |
| Forward Voltage | 1.25 V |
| Height | 11.1 mm |
| Input Current | 60 mA |
| Lead Free | Lead Free |
| Max Collector Current | 4 mA |
| Max Junction Temperature (Tj) | 100 °C |
| Max Operating Temperature | 85 °C |
| Max Output Current | 100 mA |
| Max Power Dissipation | 250 mW |
| Min Operating Temperature | -55 °C |
| Mount | PCB , Through Hole |
| Number of Elements | 1 |
| Number of Pins | 4 |
| Output Configuration | Phototransistor |
| Output Current | 4 mA |
| Output Voltage | 70 V |
| Power Dissipation | 250 mW |
| Radiation Hardening | No |
| REACH SVHC | No |
| Response Time | 8 µs |
| Reverse Breakdown Voltage | 6 V |
| Reverse Voltage (DC) | 6 V |
| Rise Time | 10 s |
| Schedule B | 8541406050, 8541406050|8541406050|8541406050|8541406050|8541406050 |
| Sensing Distance | 3.0988 mm |
| Turn-Off Delay Time | 8 µs |
| Turn-On Delay Time | 10 µs |
| Voltage Rating (DC) | 1.25 V |
| Wavelength | 950 nm |
| Width | 6.3 mm |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
มีอยู่ในสต้อค: 1,020
MOQ:1,020
SPQ:1,020
| จำนวน | ราคาต่อหน่วย (FOB JAPAN) |
|---|---|
| 1,020 - 2,039 | $1.787 |
| 2,040 - 3,059 | $1.737 |
| 3,060 - 4,079 | $1.713 |
| 4,080 - | $1.654 |
| - | - |
| - | - |
| - | - |
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