MBRD660CTT4G
ON SEMICONDUCTOR
รูปภาพใช้สำหรับการอ้างอิงเท่านั้น หากต้องการข้อมูลเพิ่มเติมโปรดดูที่คำอธิบายสินค้าด้านล่าง
เอกสาร
คำอธิบายสินค้า
| Average Rectified Current | 3 A |
| Case/Package | DPAK |
| Contact Plating | Tin |
| Current Rating | 6 A |
| Element Configuration | Common Cathode |
| Forward Current | 6 A |
| Forward Voltage | 900 mV |
| Halogen Free | Halogen Free |
| Height | 2.38 mm |
| Lead Free | Lead Free |
| Lifecycle Status | Production (Last Updated: 4 years ago) |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 4 years ago) |
| Max Forward Surge Current (Ifsm) | 75 A |
| Max Operating Temperature | 175 °C |
| Max Repetitive Reverse Voltage (Vrrm) | 60 V |
| Max Reverse Leakage Current | 100 µA |
| Max Reverse Voltage (DC) | 60 V |
| Max Surge Current | 75 A |
| Min Operating Temperature | -65 °C |
| Number of Pins | 3 |
| Packaging | Tape and Reel |
| Peak Non-Repetitive Surge Current | 75 A |
| Peak Reverse Current | 100 µA |
| Radiation Hardening | No |
| REACH SVHC | No |
| Schedule B | 8541100080 |
| Voltage Rating (DC) | 60 V |
| Width | 6.22 mm |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
