MMBTH10LT1G
ON SEMICONDUCTOR
เอกสาร
คำอธิบายสินค้า
| Case/Package | SOT-23-3 |
| Collector Base Voltage (VCBO) | 30 V |
| Collector Emitter Breakdown Voltage | 25 V |
| Collector Emitter Saturation Voltage | 500 mV |
| Collector Emitter Voltage (VCEO) | 25 V |
| Contact Plating | Tin |
| Current Rating | 4 mA |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 3 V |
| Frequency | 650 MHz |
| Gain Bandwidth Product | 650 MHz |
| Halogen Free | Halogen Free |
| Height | 1.11 mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Lifecycle Status | Production (Last Updated: 4 years ago) |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 4 years ago) |
| Max Breakdown Voltage | 25 V |
| Max Collector Current | 100 nA |
| Max Frequency | 650 MHz |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 225 mW |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 225 mW |
| Radiation Hardening | No |
| REACH SVHC | No |
| Termination | SMD/SMT |
| Transition Frequency | 650 MHz |
| Voltage Rating (DC) | 25 V |
| Weight | 4.535924 g |
| Width | 1.4 mm |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
มีอยู่ในสต้อค: 338
MOQ:338
SPQ:1
| จำนวน | ราคาต่อหน่วย (FOB JAPAN) |
|---|---|
| 338 - | $0.217 |
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