BAS19LT1G
ON SEMICONDUCTOR
รูปภาพใช้สำหรับการอ้างอิงเท่านั้น หากต้องการข้อมูลเพิ่มเติมโปรดดูที่คำอธิบายสินค้าด้านล่าง
เอกสาร
คำอธิบายสินค้า
| Average Rectified Current | 200 mA |
| Breakdown Voltage | 120 V |
| Capacitance | 5 pF |
| Case/Package | SOT-23-3 |
| Contact Plating | Tin |
| Element Configuration | Single |
| Forward Current | 200 mA |
| Forward Voltage | 1.25 V |
| Halogen Free | Halogen Free |
| Height | 940 µm |
| Lead Free | Lead Free |
| Lifecycle Status | Production (Last Updated: 4 years ago) |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 4 years ago) |
| Max Forward Surge Current (Ifsm) | 625 mA |
| Max Operating Temperature | 150 °C |
| Max Repetitive Reverse Voltage (Vrrm) | 120 V |
| Max Reverse Leakage Current | 100 nA |
| Max Reverse Voltage (DC) | 120 V |
| Max Surge Current | 625 mA |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Output Current | 200 mA |
| Packaging | Tape and Reel |
| Peak Non-Repetitive Surge Current | 625 mA |
| Peak Reverse Current | 100 nA |
| Polarity | Standard |
| Power Dissipation | 385 mW |
| Radiation Hardening | No |
| REACH SVHC | No |
| Recovery Time | 50 ns |
| Reverse Recovery Time | 50 ns |
| Schedule B | 8541100070, 8541100070|8541100070|8541100070|8541100070|8541100070 |
| Width | 1.3 mm |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
มีอยู่ในสต้อค: 7,826
MOQ:4,311
SPQ:1
| จำนวน | ราคาต่อหน่วย (FOB JAPAN) |
|---|---|
| 4,311 - | $0.017 |
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