2SA1943-R(Q)

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Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerTOSHIBA
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Maximum)-230 V
Current - Collector (Ic) (Max)-15 A
DC Current Gain (hFE) (Min) @ Ic, Vce55
Vce saturation (max) @lb, Ic-3.0V
Mounting TypeThrough Hole
Device PackageTO-3P(L)

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 26

MOQ:1

SPQ:1

Quantity

Unit Price Total
QuantityUnit Price
1 - 9 $0.733
10 - 49 $0.713
50 - 99 $0.70
100 - 499 $0.687
500 - 999 $0.683
1,000 - 1,999 $0.682
2,000 - 3,999 $0.681
4,000 - $0.68

Alternative Part Number(s)

TTA1943(Q)

Toshiba

2SA2121-O(Q)

Toshiba

FJP1943RTU

onsemi

NJL1302DG

onsemi