TPN2R503NC,L1Q
TOSHIBA
Images are for reference only.
Please see Product Specifications
for details.
Product Specifications
| Category | Discrete semiconductors Discrete single |
| Manufacturer | TOSHIBA |
| Series | U-MOSVIII |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 40A(TA) |
| Input Capacitance (Ciss) (Max) @ Vds | 2230pF @ 15 V |
| Power Dissipation (Max) | 700mW(Ta), 35W(Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhms @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 500µA |
| Vgs (Max) | ±20V |
| Technology | Mosfet (Metal Oxide) |
| Operating Temperature Range | 150°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | 8-TSON Advanced (3.1X3.1) |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 4,610
MOQ:10
SPQ:1
| Quantity | Unit Price | |
|---|---|---|
| 10 - 99 | $0.881 | |
| 100 - 499 | $0.442 | |
| 500 - 999 | $0.38 | |
| 1,000 - 4,999 | $0.34 | |
| 5,000 - 9,999 | $0.331 | |
| 10,000 - 19,999 | $0.325 | |
| 20,000 - 39,999 | $0.32 | |
| 40,000 - | $0.32 | |
