TK040N65Z,S1F(S

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DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerTOSHIBA
FET TypeN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C57A
Input Capacitance (Ciss) (Max) @ Vds6250pF
Rds On (Max) @ Id, Vgs40 mOhms@10V
Device PackageTO-247

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

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