SI7252DP-T1-GE3

VISHAY

RoHS Status:RoHS

Stock Type:Franchise

Supplier Rank:A-1

CoreStaff Part Number:st71816063

Date Code:2438

Images are for reference only.
Please see Product Specifications
for details.


Product Specifications

CategoryDiscrete semiconductors
ManufacturerVISHAY
SeriesTrenchFETR
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C36.7A
Input Capacitance (Ciss) (Max) @ Vds1170pF @ 50V
Power - Max46W
Rds On (Max) @ Id, Vgs18mOhms @ 15A, 10V
Vgs(th) (Max) @ Id3.5V @ 250μA
Gate charge (Qg) when Vgs is applied (max)27nC @ 10V
TechnologyMOSFET (Metal Oxide)
Configuration2 Nチャンネル(デュアル)
FET FeatureLogic Level Gate
Operating Temperature Range-55°C ~ 150°C(TJ)
Mounting TypeSurface Mount
Device PackagePowerPAKR SO-8デュアル

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 3,000

MOQ:3,000

SPQ:3,000

Quantity

Unit Price Total
QuantityUnit Price
3,000 - 29,999 $1.248
30,000 - $1.246
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