SCT2H12NZGC11
ROHM
RoHS Status:RoHS
Packing Type:stick/tube
COO:TH
Lifecycle Status:Production (Last Updated: 4 years ago)
Documents
Product Specifications
Category | Discrete semiconductors Discrete single |
Manufacturer | ROHM |
FET Type | N-Channel |
Drain to Source Voltage (Vdss) | 1700V |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Current - Continuous Drain (Id) @ 25°C | 3.7A(Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 184pF @ 800 V |
Power Dissipation (Max) | 35W(Tc) |
Rds On (Max) @ Id, Vgs | 1.5Ohms @ 1.1A, 18V |
Vgs(th) (Max) @ Id | 4V @ 900µA |
Vgs (Max) | +22V, -6V |
Technology | Sicfet (Silicon Carbide) |
Operating Temperature Range | 175°C(TJ) |
Mounting Type | Through Hole |
Device Package | TO-3PFM |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 860
MOQ:1
SPQ:1
Scheduled Incoming Stock (back-order): 0
Quantity | Unit Price | |
---|---|---|
1 - 4 | $6.826 | |
5 - 9 | $3.708 | |
10 - 29 | $3.116 | |
30 - 49 | $2.722 | |
50 - 99 | $2.643 | |
100 - 199 | $2.584 | |
200 - 299 | $2.554 | |
300 - | $2.544 |