RX3P12BATC16

RX3P12BATC16_製品イメージ01

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DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
FET TypeP-Channel
Drain to Source Voltage (Vdss)100V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C120A(Tc)
Input Capacitance (Ciss) (Max) @ Vds16600pF @ 50 V
Power Dissipation (Max)201W(Tc)
Rds On (Max) @ Id, Vgs12.3mOhms @ 60A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Vgs (Max)±20V
TechnologyMosfet (Metal Oxide)
Operating Temperature Range150°C(TJ)
Mounting TypeThrough Hole
Device PackageTO-220AB

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

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