RX3P12BATC16
ROHM
Documents
Product Specifications
Category | Discrete semiconductors Discrete single |
Manufacturer | ROHM |
FET Type | P-Channel |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C | 120A(Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 16600pF @ 50 V |
Power Dissipation (Max) | 201W(Tc) |
Rds On (Max) @ Id, Vgs | 12.3mOhms @ 60A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Vgs (Max) | ±20V |
Technology | Mosfet (Metal Oxide) |
Operating Temperature Range | 150°C(TJ) |
Mounting Type | Through Hole |
Device Package | TO-220AB |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.