RS6G100BGTB1

RS6G100BGTB1_製品イメージ01

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Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
FET TypeN-Channel
Drain to Source Voltage (Vdss)40V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C100A(Tc)
Input Capacitance (Ciss) (Max) @ Vds1510pF @ 20 V
Power Dissipation (Max)3W(Ta), 59W(Tc)
Rds On (Max) @ Id, Vgs3.4mOhms @ 90A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Vgs (Max)±20V
TechnologyMosfet (Metal Oxide)
Operating Temperature Range150°C(TJ)
Mounting TypeSurface Mount
Device Package8-HSOP

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 14

MOQ:1

SPQ:1

Scheduled Incoming Stock (back-order): 0

Quantity

Unit Price Total
QuantityUnit Price
1 - 9 $1.382
10 - 49 $1.103
50 - 99 $0.629
100 - 299 $0.57
300 - 499 $0.531
500 - 999 $0.523
1,000 - 1,999 $0.517
2,000 - $0.514

Alternative Part Number(s)