RQ3E180AJTB

RQ3E180AJTB_製品イメージ01

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Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
FET TypeN-Channel
Drain to Source Voltage (Vdss)30V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C18A(TA), 30A(Tc)
Input Capacitance (Ciss) (Max) @ Vds4290pF @ 15 V
Power Dissipation (Max)2W(Ta), 30W(Tc)
Rds On (Max) @ Id, Vgs4.5mOhms @ 18A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 11mA
Vgs (Max)±12V
TechnologyMosfet (Metal Oxide)
Operating Temperature Range150°C(TJ)
Mounting TypeSurface Mount
Device Package8-HSMT(3.2x3)

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 0

0 In Stock

MOQ:1

SPQ:1

Scheduled Incoming Stock (back-order): 3,000


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