RN2302(TE85L,F)
TOSHIBA
Documents
Product Specifications
Category | Discrete semiconductors Discrete single Pre-Biased |
Manufacturer | TOSHIBA |
Series | - |
Transistor Type | PNP - Pre-Bias |
Voltage - Collector Emitter Breakdown (Max) | 50 V |
Current - Collector Cutoff (Max) | 500 nA |
Current - Collector (Ic) (Max) | 100 mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA/5V |
Resistor - Emitter Base (R2) | 10 kOhms |
Resistor - Base (R1) | 10 kOhms |
Power - Max | 0.1 W |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA/ 5mA |
Mounting Type | Surface Mount |
Device Package | USM |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.