RN1427(TE85L,F)

RN1427(TE85L,F)_製品イメージ01

Images are for reference only.
Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerTOSHIBA
Transistor TypeNPN - Pre-Bias
Voltage - Collector Emitter Breakdown (Max)50 V
Current - Collector Cutoff (Max)500 nA
Current - Collector (Ic) (Max)800 mA
DC Current Gain (hFE) (Min) @ Ic, Vce90 @ 100mA/1V
Resistor - Emitter Base (R2)10 kOhms
Resistor - Base (R1)2.2 kOhms
Power - Max200 mW
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA/50mA
Product OverviewTRANS PREBIAS NPN 50V 0.8A SMINI
Mounting TypeSurface Mount
Device PackageS Mini

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 321

MOQ:1

SPQ:1

Scheduled Incoming Stock (back-order): 0

Quantity

Unit Price Total
QuantityUnit Price
1 - 49 $0.312
50 - 99 $0.234
100 - 299 $0.175
300 - 499 $0.135
500 - 999 $0.127
1,000 - 3,999 $0.121
4,000 - 4,999 $0.117
5,000 - $0.117

Alternative Part Number(s)

MMBT4401-7

Diodes Inc.

2SC5865TLR

ROHM

BC817-16

Diodes Inc.

RN1425TE85LF

Toshiba