RN1427(TE85L,F)
TOSHIBA
Documents
Product Specifications
Category | Discrete semiconductors Discrete single Pre-Biased |
Manufacturer | TOSHIBA |
Transistor Type | NPN - Pre-Bias |
Voltage - Collector Emitter Breakdown (Max) | 50 V |
Current - Collector Cutoff (Max) | 500 nA |
Current - Collector (Ic) (Max) | 800 mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 100mA/1V |
Resistor - Emitter Base (R2) | 10 kOhms |
Resistor - Base (R1) | 2.2 kOhms |
Power - Max | 200 mW |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA/50mA |
Product Overview | TRANS PREBIAS NPN 50V 0.8A SMINI |
Mounting Type | Surface Mount |
Device Package | S Mini |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
In Stock: 321
MOQ:1
SPQ:1
Scheduled Incoming Stock (back-order): 0
Quantity | Unit Price | |
---|---|---|
1 - 49 | $0.312 | |
50 - 99 | $0.234 | |
100 - 299 | $0.175 | |
300 - 499 | $0.135 | |
500 - 999 | $0.127 | |
1,000 - 3,999 | $0.121 | |
4,000 - 4,999 | $0.117 | |
5,000 - | $0.117 |